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Cheng-Chi Chuang

USPTO Granted Patents = 216 (Patent Applications = 125)

Average Co-Inventor Count = 5.4

ph-index = 6

Forward Citations = 213(Granted Patents)

Forward Citations (Not Self Cited) = 146(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Zhonghe, TW (2014)
New Taipei, TW (2014 - 2024)
Taipei, TW (2021 - 2024)
Hsinchu, TW (2022 - 2024)

Company Filing History:

216 out of 40,848

Taiwan Semiconductor Manufacturing Comp. Ltd.

where one patent can have more than one assignee

Years Active: 2014-2025

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Areas of Expertise:

Integrated Circuits

Semiconductor Devices

Backside Power Rails

Air Gaps

Source/Drain Contacts

Field Effect Transistors

Nanostructures

Low-K Dielectrics

Interconnect Structures

Contact Via Formation

Spacers In Semiconductor Devices

Dielectric Hybrid Fin

216 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12507438 - Semiconductor structure with contact rail and method for forming the same (2025-12-23),

2. 12484254 - Integrated circuit structure with backside via rail (2025-11-25),

3. 12463096 - Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof (2025-11-04),

4. 12463092 - Semiconductor device with air gaps and method of fabrication thereof (2025-11-04),

5. 12457794 - Dual side contact structures for source/drain regions in semiconductor transistor devices and method of forming (2025-10-28),

6. 12453159 - Drain side recess for back-side power rail device (2025-10-21),

7. 12453114 - Semiconductor transistor devices having double-sided interconnect structures (2025-10-21),

8. 12432970 - Semiconductor devices with backside power rail and backside self-aligned via (2025-09-30),

9. 12424486 - Integrated circuit structure with backside interconnection structure having air gap (2025-09-23),

10. 12424484 - Spacers for semiconductor devices including backside power rails (2025-09-23),

11. 12402345 - Semiconductor structure and method for forming the same (2025-08-26),

12. 12396233 - Semiconductor device having backside via and method of fabricating thereof (2025-08-19),

13. 12389670 - Air spacer and capping structures in semiconductor devices (2025-08-12),

14. 12387973 - Semiconductor device structure and methods of forming the same (2025-08-12),

15. 12382710 - Method for forming long channel back-side power rail device (2025-08-05),

Cheng-Chi Chuang, a prominent innovator in the field of semiconductor devices, hails from New Taipei, TW. With over 100 patents to his name, Chuang has made significant contributions to the world of technology.

One of Chuang's most recent patents involves a semiconductor device with air gaps and a method of fabrication for such a structure. The innovative method includes creating a structure with a substrate, a first dielectric layer, and semiconductor channel layers. The method also involves etching the substrate from the backside of the structure, forming S/D contacts, and depositing a seal layer over the S/D contacts, thus capping an air gap between the gate structure and the seal layer. This methodology allows for capacitance reduction in backside power rail devices, making it a significant advancement in semiconductor technology.

Chuang has worked with some of the biggest names in the industry, such as Taiwan Semiconductor Manufacturing Company Limited and COMP-ANY GmbH. He has also closely collaborated with fellow innovators like Chih-Hao Wang and Li-Zhen Yu.

Chuang's perseverance and dedication to innovation serve as inspiration for present and future generations of inventors in the field of technology. We at idiyas.com are thrilled to celebrate his contributions to the world of patents and inventions, and we look forward to seeing more breakthroughs from him in the future.

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