The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Aug. 09, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Huan-Chieh Su, Tianzhong Township, TW;
Cheng-Chi Chuang, New Taipei, TW;
Chih-Hao Wang, Baoshan Township, TW;
Kuo-Cheng Chiang, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor transistor device includes forming a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The channel structure is formed by forming a stack of semiconductor layers. The gate structure is formed wrapping around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are formed on opposite endings of the channel structure. The gate contact is formed on the gate structure. The back-side source/drain contact is formed under the first source/drain epitaxial structure. The second source/drain epitaxial structure is formed to have a concave bottom surface.