The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jul. 14, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yun-Ju Fan, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Huan-Chieh Su, Changhua County, TW;
Cheng-Chi Chuang, New Taipei, TW;
Chih-Hao Wang, Baoshan Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure is provided, and includes a first fin structure, a second fin structure, and a third fin structure over a substrate. The second fin structure is located between the first fin structure and the third fin structure. The semiconductor structure also includes a fin isolation structure formed between the first fin structure and the third fin structure; and a gate structure formed over the first fin structure, the second fin structure, the third fin structure and the fin isolation structure. The semiconductor structure further includes a plurality of epitaxial structures formed over the first fin structure, the second fin structure and the third fin structure. The semiconductor structure includes a dielectric material over the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure; and a contact formed in the dielectric material and connected to the first epitaxial structure and the third epitaxial structure.