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Hsinchu, Taiwan

Sheng-Tsung Wang

USPTO Granted Patents = 45 (Patent Applications = 43)

Average Co-Inventor Count = 6.0

ph-index = 3

Forward Citations = 23(Granted Patents)

Company Filing History:

43 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Realtek Semiconductor Inc.

Years Active: 2020-2025

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Areas of Expertise:

Semiconductor Devices

Field Effect Transistors

Source Drain Isolation

Multi-Layer Dielectric

Low-K Metal Gate

Air Gap Structures

Transistor Devices

Gate Spacer

Nitrided Capping Layer

Stacked Via Contact

Slot Contacts

Circuitry Power Domains

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12494423 - Semiconductor device including stacked via contact and method for manufacturing the same (2025-12-09),

2. 12471315 - Semiconductor device including spacers on sides of dielectric structure and manufacturing method thereof (2025-11-11),

3. 12463096 - Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof (2025-11-04),

4. 12463095 - Semiconductor structure with a laminated layer (2025-11-04),

5. 12408394 - Semiconductor device structure and method for forming the same (2025-09-02),

6. 12402345 - Semiconductor structure and method for forming the same (2025-08-26),

7. 12389665 - Semiconductor device structure (2025-08-12),

8. 12356688 - Method for forming semiconductor device (2025-07-08),

9. 12336215 - Semiconductor device structure and method for forming the same (2025-06-17),

10. 12324188 - Field effect transistor with source/drain contact isolation structure and method (2025-06-03),

11. 12300734 - Semiconductor device having air gap and method of fabricating thereof (2025-05-13),

12. 12300727 - Process and structure for source/drain contacts (2025-05-13),

13. 12261082 - Semiconductor devices with a nitrided capping layer (2025-03-25),

14. 12255070 - Semiconductor devices and methods of manufacturing (2025-03-18),

15. 12131942 - Source/drain isolation structure and methods thereof (2024-10-29),

Title: The Innovative Journey of Inventor Sheng-Tsung Wang

Introduction: Sheng-Tsung Wang, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Sheng-Tsung Wang holds several patents in the areas of semiconductor technology and renewable energy, showcasing his expertise and forward-thinking approach to invention.

Career Highlights: Throughout his illustrious career, Sheng-Tsung Wang has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of innovation.

Collaborations: Sheng-Tsung Wang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of creativity and excellence in his pursuit of cutting-edge inventions.

Conclusion: Sheng-Tsung Wang's passion for innovation and his relentless drive to create have solidified his reputation as a pioneering inventor in the global tech community.

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