The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Feb. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Hung Chu, Hsinchu, TW;
Po-Chin Chang, Hsinchu, TW;
Tzu-Pei Chen, Hsinchu, TW;
Yuting Cheng, Hsinchu, TW;
Kan-Ju Lin, Hsinchu, TW;
Chih-Shiun Chou, Hsinchu, TW;
Hung-Yi Huang, Hsinchu, TW;
Pinyen Lin, Hsinchu, TW;
Sung-Li Wang, Hsinchu, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Shao-An Wang, Hsinchu, TW;
Harry Chien, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes forming a conductive feature in a first dielectric layer; forming a second dielectric layer on the first dielectric layer; forming a trench that penetrates through the second dielectric layer, and terminates at the conductive feature; forming a contact layer in the trench and on the conductive feature; etching back the contact layer to form a first via contact feature in the trench, the first via contact feature being electrically connected to the conductive feature; and forming a second via contact feature on the first via contact feature in the trench.