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For the Inventor, By the Inventor

Zhubei, Taiwan

Sung-Li Wang

USPTO Granted Patents = 106 

Average Co-Inventor Count = 4.9

ph-index = 7

Forward Citations = 3,382(Granted Patents)

DiyaCoin DiyaCoin = 3.51 


Inventors with similar research interests:


Location History:

  • Zhubei, TW (2014 - 2024)
  • Hsinchu County, TW (2017 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:

goldMedal106 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

where 'Filed Patents' based on already Granted Patents

106 patents (USPTO):
1. 12477808 - Semiconductor device having multi-layer epitaxial structures with different lattice constants (2025-11-18),
2. 12477778 - Epitaxial structure for source/drain contact for semiconductor structure having fin structure (2025-11-18),
3. 12457790 - Semiconductor device including conductive nitride feature and method of making the semiconductor device (2025-10-28),
4. 12433006 - Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device (2025-09-30),
5. 12432977 - Semiconductor device and method for manufacturing the same (2025-09-30),
6. 12431431 - Conductive structure interconnects with downward projections (2025-09-30),
7. 12431412 - Contact plugs for semiconductor device and method of forming same (2025-09-30),
8. 12400962 - Liner-free conductive structures with anchor points (2025-08-26),
9. 12362234 - Contact structure for semiconductor device (2025-07-15),
10. 12362187 - Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure (2025-07-15),
11. 12349408 - Transistor gate contacts and methods of forming the same (2025-07-01),
12. 12334435 - Middle-of-line interconnect structure and manufacturing method (2025-06-17),
13. 12327788 - Gate to source drain interconnects (2025-06-10),
14. 12300540 - Conductive feature of semiconductor device and method of forming same (2025-05-13),
15. 12272752 - Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructures (2025-04-08),

Sure, I can help you with that. Here is the article about inventor Sung-Li Wang:

Title: Sung-Li Wang: A Visionary Inventor Shaping the Future of Technology

Introduction:

Sung-Li Wang, a renowned inventor based in Zhubei, Taiwan, is celebrated for his passion for innovation and relentless pursuit of excellence. His visionary work continues to inspire and shape the future of technology.

Latest Patents:

1. Liner-free conductive structures with anchor points: This patent describes a method for forming liner-free or barrier-free conductive structures, showcasing Wang's expertise in cutting-edge technology.

2. Semiconductor device and manufacturing method thereof: Demonstrating Wang's proficiency, this patent details a semiconductor device with a field effect transistor and innovative gate structure design.

Career Highlights:

With an impressive 72 patents to his name, Wang has made significant contributions to the tech industry. He is currently associated with Taiwan Semiconductor Manufacturing Company Ltd., a leader in semiconductor manufacturing.

Collaborations:

Wang has collaborated with skilled professionals in his field, including coworkers Yasutoshi Okuno and Ding-Kang Shih. Their teamwork has led to groundbreaking innovations and advancements in technology.

Conclusion:

Sung-Li Wang's dedication to innovation and his remarkable portfolio of patents underscore his status as a visionary inventor. His work not only inspires but also influences the trajectory of technology, making him a pivotal figure in the industry.

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