Hsinchu, Taiwan

Mei-Yun Wang

This inventor holds 220 USPTO granted patents and 64 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66795). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2000-2026.

USPTO Granted Patents = 220 

% Patents Active = 90.9

Average Co-Inventor Count = 4.8

ph-index = 10

Forward Citations = 412(Granted Patents)

Forward Citations (Not Self Cited) = 337(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Phu-Pei, TW (2017)
  • Hsin-chu, TW (2000 - 2024)
  • Chu-Pei, TW (2006 - 2024)
  • Hsinc-Chu, TW (2024)

Company Filing History:


Years Active: 2000-2026

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Areas of Expertise:
SRAM Cells
FinFET Structures
Contact Optimization
Backside Via
Copper Vias
Isolation Structures
Metal Contacts
Transistor Devices
Epitaxial Structures
Interconnect Structures
Low-k Spacer
Dielectric Structures
220 patents (USPTO):Explore Patents

Title: Mei-Yun Wang: Innovating Semiconductor Devices and Methods

Introduction:

Meet Mei-Yun Wang, an innovative inventor hailing from Hsin-Chu, Taiwan, known for his groundbreaking work in semiconductor devices. With an impressive repertoire of 148 patents, Mei-Yun Wang has made significant contributions to the field. Let's delve into his latest patents, career highlights, and collaborations, showcasing his invaluable expertise in the semiconductor industry.

Latest Patents:

Mei-Yun Wang's recent patents demonstrate his intricate understanding and mastery of semiconductor technologies. Two noteworthy inventions are:

1. Semiconductor devices with backside via and methods thereof:

This patent describes a semiconductor structure that includes various components such as gate structures, drain features, and source features. It introduces a novel configuration that reduces parasitic capacitance and enlarges the leakage window, leading to more efficient semiconductor performance.

2. Epitaxial source/drain structure and method:

This patent outlines a fabrication method for semiconductor structures, employing different types of epitaxial source/drain (S/D) features. By selectively etching the structure, Mei-Yun Wang's method removes specific portions of the S/D features, resulting in optimized semiconductor characteristics.

Career Highlights:

As a valued professional, Mei-Yun Wang has dedicated his career to the development of innovative semiconductor devices. He has been an integral part of Taiwan Semiconductor Manufacturing Company Limited (TSMC), a renowned global semiconductor manufacturer. The company, often referred to as TSMC, has set industry standards and played a crucial role in advancing semiconductor technology worldwide.

Collaborations:

Mei-Yun Wang's expertise and ingenuity have allowed him to collaborate and work alongside esteemed colleagues. Notable coworkers include Fu-Kai Yang and Chen-Ming Lee. Collaborations like these stimulate knowledge sharing and foster an atmosphere of continuous innovation, contributing to the growth of the semiconductor industry as a whole.

Conclusion:

Mei-Yun Wang's impressive portfolio of patents and inventions firmly establishes him as a prominent figure in the semiconductor field. Through his work at TSMC and collaborations with esteemed colleagues, he has made invaluable contributions to advancing semiconductor technologies. As Wang continues to push the boundaries of innovation, his contributions are sure to shape the future of the semiconductor industry.

Profile summary based on public USPTO records.
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