The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Jun. 13, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chung-Hao Cai, Hsinchu, TW;
Chia-Hsien Yao, Hsinchu, TW;
Yen-Jun Huang, Hsinchu, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming first and second fins disposed on a substrate, forming a gate structure over the first and second fins, epitaxially growing a first source/drain (S/D) feature on the first fin and a second S/D feature on the second fin, depositing a dielectric layer covering the first and second S/D features, etching the dielectric layer to form a trench exposing the first and second S/D features, forming a metal structure in the trench and extending from the first S/D feature to the second S/D feature, performing a cut metal process to form an opening dividing the metal structure into a first segment over the first S/D feature and a second segment over the second S/D feature, and depositing an isolation feature in the opening. The isolation feature separates the first segment from the second segment.