Chung-Hao Cai

Title: Chung-Hao Cai: Innovator in Semiconductor Technology

Introduction

Chung-Hao Cai is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to device structures and manufacturing methods.

Latest Patents

One of his latest patents is focused on a source/drain contact structure. This method involves receiving a workpiece that includes a gate structure and various dielectric features. The process includes replacing a portion of the dielectric layer with a hard mask layer, etching to form a source/drain contact opening, and ultimately forming a contact over the source/drain feature. Another notable patent is for a contact structure with an air spacer for semiconductor devices. This method outlines the formation of an insulating layer over a semiconductor substrate, the creation of a trench, and the implantation of ions to form a doping region, followed by the formation of a conductive connecting structure.

Career Highlights

Chung-Hao Cai is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing semiconductor device technology, contributing to the efficiency and performance of modern electronic devices.

Collaborations

Chung-Hao has collaborated with notable colleagues such as Ting Fang and Chen-Ming Lee, further enhancing the innovative environment at his workplace.

Conclusion

Chung-Hao Cai's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.