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For the Inventor, By the Inventor

Hsinchu, Taiwan

Fu-Kai Yang

This inventor holds 147 USPTO granted patents and 65 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66795). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fu-Kai Yang. Retrieved from https://idiyas.com/inventor/fu-kai-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 147 

% Patents Active = 95.9

Average Co-Inventor Count = 5.0

ph-index = 7

Forward Citations = 193(Granted Patents)

Forward Citations (Not Self Cited) = 131(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Shulin, TW (2006)
  • Dali, TW (2013)
  • Hsinchu, TW (2015 - 2024)

Company Filing History:

goldMedal144 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 491 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2006-2026

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Areas of Expertise:
Semiconductor Devices
Contact Structures
Backside Via
FinFET Technology
Epitaxial Structures
Isolation Structures
Low-Resistance Contacts
Polishing Interconnects
Silicide Structures
Copper-Containing Vias
Gate-All-Around Transistors
Parasitic Capacitance
147 patents (USPTO):Explore Patents
1. 12672346 - Method for forming source/drain contacts (2026-06-30),
2. 12641861 - Methods of reducing capacitance in field-effect transistors (2026-05-26),
3. 12635493 - All-tungsten scheme for source/drain contact, source/drain via, and gate via (2026-05-19),
4. 12563818 - Methods of forming semiconductor devices (2026-02-24),
5. 12550408 - Connection between gate and source/drain feature (2026-02-10),
6. 12550407 - Semiconductor devices with backside via and methods thereof (2026-02-10),
7. 12543553 - Forming liners to facilitate the formation of copper-containing vias in advanced technology nodes (2026-02-03),
8. 12527071 - Metal gate structure cutting process (2026-01-13),
9. 12520566 - Contact structure and manufacturing method thereof (2026-01-06),
10. 12507459 - Semiconductor device contact structures and methods of fabricating thereof (2025-12-23),
11. 12506034 - Polishing interconnect structures in semiconductor devices (2025-12-23),
12. 12501655 - Overhanging source/drain contact (2025-12-16),
13. 12464806 - Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same (2025-11-04),
14. 12464774 - Semiconductor structure and method for manufacturing the same (2025-11-04),
15. 12439678 - Isolation structures (2025-10-07),

Title: Fu-Kai Yang: Innovator from Hsinchu

Introduction: Fu-Kai Yang is a renowned inventor hailing from Hsinchu, Taiwan. His contributions to the field of innovation have been significant, making him a respected figure in the industry.

Latest Patents: Fu-Kai Yang holds several patents in various technological fields, showcasing his diverse range of expertise and innovative thinking. His latest patents focus on cutting-edge developments in electronics and semiconductor technologies.

Career Highlights: With a career spanning over two decades, Fu-Kai Yang has worked with leading tech companies and research institutions in Taiwan. His innovative solutions have revolutionized the way we approach challenges in the tech industry.

Collaborations: Fu-Kai Yang has collaborated with top researchers, engineers, and inventors both locally and internationally. These collaborations have led to groundbreaking inventions and have further solidified his reputation as a visionary in the field of innovation.

Conclusion: In conclusion, Fu-Kai Yang's dedication to pushing the boundaries of technology and his passion for innovation continue to inspire the next generation of inventors. His impact on the industry is undeniable, and his legacy will undoubtedly shape the future of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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