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For the Inventor, By the Inventor

Hsinchu, Taiwan

Fu-Kai Yang

USPTO Granted Patents = 135 

Average Co-Inventor Count = 5.0

ph-index = 6

Forward Citations = 163(Granted Patents)

Forward Citations (Not Self Cited) = 131(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Shulin, TW (2006)
  • Dali, TW (2013)
  • Hsinchu, TW (2015 - 2024)

Company Filing History:

goldMedal135 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2006-2025

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Areas of Expertise:
Semiconductor Transistor
Finfet
Epitaxial Structures
Low-K Spacer
Silicide Contact
Isolation Structures
Backside Contact
Contact Optimization
Dielectric Structures
Interconnect Structures
Parasitic Capacitance
Source/Drain Contact
135 patents (USPTO):Explore Patents
1. 12464806 - Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same (2025-11-04),
2. 12464774 - Semiconductor structure and method for manufacturing the same (2025-11-04),
3. 12439678 - Isolation structures (2025-10-07),
4. 12438049 - Methods for reducing contact depth variation in semiconductor fabrication (2025-10-07),
5. 12414321 - Contact profile optimization for IC device performance improvement (2025-09-09),
6. 12406907 - Semiconductor structure with conductive_structure (2025-09-02),
7. 12389646 - Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the same (2025-08-12),
8. 12376360 - Silicide backside contact (2025-07-29),
9. 12334388 - Isolation structure and a self-aligned capping layer formed thereon (2025-06-17),
10. 12324202 - Semiconductor device structure and method for forming the same (2025-06-03),
11. 12317538 - Semiconductor devices (2025-05-27),
12. 12300538 - Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same (2025-05-13),
13. 12283630 - Epitaxial source/drain structures for multigate devices and methods of fabricating thereof (2025-04-21),
14. 12266703 - Dielectric structures for semiconductor device structures (2025-04-01),
15. 12266606 - Semiconductor device with backside spacer and methods of forming the same (2025-04-01),

Title: Fu-Kai Yang: Innovator from Hsinchu

Introduction: Fu-Kai Yang is a renowned inventor hailing from Hsinchu, Taiwan. His contributions to the field of innovation have been significant, making him a respected figure in the industry.

Latest Patents: Fu-Kai Yang holds several patents in various technological fields, showcasing his diverse range of expertise and innovative thinking. His latest patents focus on cutting-edge developments in electronics and semiconductor technologies.

Career Highlights: With a career spanning over two decades, Fu-Kai Yang has worked with leading tech companies and research institutions in Taiwan. His innovative solutions have revolutionized the way we approach challenges in the tech industry.

Collaborations: Fu-Kai Yang has collaborated with top researchers, engineers, and inventors both locally and internationally. These collaborations have led to groundbreaking inventions and have further solidified his reputation as a visionary in the field of innovation.

Conclusion: In conclusion, Fu-Kai Yang's dedication to pushing the boundaries of technology and his passion for innovation continue to inspire the next generation of inventors. His impact on the industry is undeniable, and his legacy will undoubtedly shape the future of technological advancements.

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