The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Sep. 03, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hung Tsai, Hsinchu, TW;

Chao-Hsun Wang, Taoyuan County, TW;

Pei-Hsuan Lee, Taipei, TW;

Chih-Chien Chi, Hsinchu, TW;

Ting-Kui Chang, New Taipei, TW;

Fu-Kai Yang, Hsinchu, TW;

Mei-Yun Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H10D 64/258 (2025.01);
Abstract

A semiconductor device includes a source/drain component of a transistor. A source/drain contact is disposed over the source/drain component. A source/drain via is disposed over the source/drain contact. The source/drain via contains copper. A first liner at least partially surrounds the source/drain via. A second liner at least partially surrounds the first liner. The first liner and the second liner are disposed between the source/drain contact and the source/drain via. The first liner and the second liner have different material compositions.


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