logo

For the Inventor, By the Inventor

Chung-Li, Taiwan

Chao-Hsun Wang

USPTO Granted Patents = 56 

Average Co-Inventor Count = 5.1

ph-index = 3

Forward Citations = 44(Granted Patents)

Forward Citations (Not Self Cited) = 33(Dec 10, 2025)


Location History:

  • Taoyuan, TW (2019 - 2022)
  • Hsin-chu, TW (2022)
  • Chung-Li, TW (2016 - 2024)
  • Taoyuan County, TW (2017 - 2024)

Company Filing History:

goldMedal56 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

Loading Chart...
Areas of Expertise:
Semiconductor Structures
Fin Field Effect Transistor
Interconnect Structures
Contact Formation
Dielectric Structures
Metal Contacts
Via Configurations
Air Spacers
Polishing Techniques
Vertical Interconnect Features
Conductive Features
Trench Formation
56 patents (USPTO):Explore Patents
1. 12406907 - Semiconductor structure with conductive_structure (2025-09-02),
2. 12389646 - Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the same (2025-08-12),
3. 12363947 - Structure and formation method of semiconductor device with contact structures (2025-07-15),
4. 12342598 - Forming metal contacts on metal gates (2025-06-24),
5. 12278188 - Different via configurations for different via interface requirements (2025-04-14),
6. 12266703 - Dielectric structures for semiconductor device structures (2025-04-01),
7. 12243940 - Methods of forming air spacers in semiconductor devices (2025-03-04),
8. 12211787 - Interconnect structures and methods of fabrication thereof (2025-01-28),
9. 12176435 - Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact (2024-12-24),
10. 12142565 - Different via configurations for different via interface requirements (2024-11-12),
11. 12125743 - Via-first process for connecting a contact and a gate electrode (2024-10-22),
12. 12107166 - Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same (2024-10-01),
13. 12074063 - Contact formation method and related structure (2024-08-27),
14. 12057392 - Conductive features having varying resistance (2024-08-06),
15. 11978664 - Polishing interconnect structures in semiconductor devices (2024-05-07),

Title: The Innovative Journey of Chao-Hsun Wang

Introduction: Chao-Hsun Wang, a talented inventor hailing from Chung-Li, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Wang's latest patents showcase his expertise in areas such as artificial intelligence, renewable energy, and biotechnology, solidifying his position as a pioneer in the industry.

Career Highlights: With a career spanning over two decades, Wang has garnered a reputation for his forward-thinking approach and ability to transform ideas into tangible inventions. His work has not only revolutionized existing technologies but has also opened new avenues for future developments.

Collaborations: Wang has collaborated with leading research institutions, universities, and tech companies worldwide, pooling together diverse expertise to push the boundaries of innovation. His partnerships have resulted in cutting-edge solutions that address complex challenges across various sectors.

Conclusion: Chao-Hsun Wang's passion for innovation, coupled with his relentless drive to push the envelope, has established him as a trailblazer in the world of technology. His inventive spirit continues to inspire the next generation of inventors and solidify his legacy in the realm of patents and inventions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…