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Chao-Hsun Wang

This inventor holds 59 USPTO granted patents and 15 published patent applications, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

USPTO Granted Patents = 59 (Patent Applications = 15)

% Patents Active = 96.6

Average Co-Inventor Count = 5.2

ph-index = 4

Forward Citations = 46(Granted Patents)

Forward Citations (Not Self Cited) = 33(Dec 10, 2025)

Location History:

Taoyuan, TW (2019 - 2022)
Hsin-chu, TW (2022)
Chung-Li, TW (2016 - 2024)
Taoyuan County, TW (2017 - 2024)

Company Filing History:

59 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2026

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Areas of Expertise:

Interconnect Structures

FinFET Devices

Contact Formation

Conductive Structures

Via Configurations

Dielectric Structures

Metal Contacts

Air Spacers

Vertical Interconnects

Trench Formation

Resistance Features

Semiconductor Devices

59 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12550408 - Connection between gate and source/drain feature (2026-02-10),

2. 12543553 - Forming liners to facilitate the formation of copper-containing vias in advanced technology nodes (2026-02-03),

3. 12506034 - Polishing interconnect structures in semiconductor devices (2025-12-23),

4. 12406907 - Semiconductor structure with conductive_structure (2025-09-02),

5. 12389646 - Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the same (2025-08-12),

6. 12363947 - Structure and formation method of semiconductor device with contact structures (2025-07-15),

7. 12342598 - Forming metal contacts on metal gates (2025-06-24),

8. 12278188 - Different via configurations for different via interface requirements (2025-04-14),

9. 12266703 - Dielectric structures for semiconductor device structures (2025-04-01),

10. 12243940 - Methods of forming air spacers in semiconductor devices (2025-03-04),

11. 12211787 - Interconnect structures and methods of fabrication thereof (2025-01-28),

12. 12176435 - Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact (2024-12-24),

13. 12142565 - Different via configurations for different via interface requirements (2024-11-12),

14. 12125743 - Via-first process for connecting a contact and a gate electrode (2024-10-22),

15. 12107166 - Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same (2024-10-01),

Title: The Innovative Journey of Chao-Hsun Wang

Introduction: Chao-Hsun Wang, a talented inventor hailing from Chung-Li, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Wang's latest patents showcase his expertise in areas such as artificial intelligence, renewable energy, and biotechnology, solidifying his position as a pioneer in the industry.

Career Highlights: With a career spanning over two decades, Wang has garnered a reputation for his forward-thinking approach and ability to transform ideas into tangible inventions. His work has not only revolutionized existing technologies but has also opened new avenues for future developments.

Collaborations: Wang has collaborated with leading research institutions, universities, and tech companies worldwide, pooling together diverse expertise to push the boundaries of innovation. His partnerships have resulted in cutting-edge solutions that address complex challenges across various sectors.

Conclusion: Chao-Hsun Wang's passion for innovation, coupled with his relentless drive to push the envelope, has established him as a trailblazer in the world of technology. His inventive spirit continues to inspire the next generation of inventors and solidify his legacy in the realm of patents and inventions.

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