The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Feb. 12, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chao-Hsun Wang, Taoyuan County, TW;
Yu-Feng Yin, Hsinchu County, TW;
Kuo-Yi Chao, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Feng-Yu Chang, Kaohsiung, TW;
Chen-Yuan Kao, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a metal gate structure having a gate dielectric layer and a gate electrode. A topmost surface of the gate dielectric layer is above a topmost surface of the gate electrode. The semiconductor structure further includes a conductive layer disposed on the gate electrode of the metal gate structure, the conductive layer having a bottom portion disposed laterally between sidewalls of the gate dielectric layer and a top portion disposed above the topmost surface of the gate dielectric layer. The semiconductor structure further includes a contact feature in direct contact with the top portion of the conductive layer.