The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Jul. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shih-Chieh Wu, Hsinchu, TW;
Pang-Chi Wu, Hsinchu, TW;
Wang-Jung Hsueh, New Taipei, TW;
Chao-Hsun Wang, Taoyuan, TW;
Kuo-Yi Chao, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Yi-Chun Chang, Hsinchu, TW;
Yuan-Tien Tu, Puzih, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal gate stack over a substrate and an epitaxial structure over the substrate. The semiconductor device structure also includes a conductive contact electrically connected to the epitaxial structure. A topmost surface of the metal gate stack is vertically disposed between a topmost surface of the conductive contact and a bottommost surface of the conductive contact. The semiconductor device structure further includes a first conductive via electrically connected to the metal gate stack. The topmost surface of the conductive contact is vertically disposed between a topmost surface of the first conductive via and a bottommost surface of the first conductive via. In addition, the semiconductor device structure includes a second conductive via electrically connected to the conductive contact.