Yen-Jun Huang

Title: Yen-Jun Huang: Innovator in Semiconductor Technology

Introduction

Yen-Jun Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Yen-Jun Huang holds a patent titled "Contact structure with air spacer for semiconductor device and method for forming the same." This patent describes a method for forming a semiconductor device structure. The process involves creating an insulating layer over a semiconductor substrate that includes a conductive feature. An insulating layer with a trench is then formed to expose the conductive feature. A sacrificial liner layer is applied over the trench's sidewalls and bottom. Ions are implanted into the conductive feature, resulting in a doping region with edges separated from the trench's sidewalls. After the doping region is formed, the sacrificial liner layer is removed, and a conductive connecting structure is created in the trench, separated by an air spacer.

Career Highlights

Yen-Jun Huang is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing semiconductor technologies, contributing to the company's reputation for innovation and excellence.

Collaborations

Yen-Jun Huang collaborates with talented individuals in his field, including Chung-Hao Cai and Chun-Po Chang. These collaborations enhance the innovative processes and outcomes in their projects.

Conclusion

Yen-Jun Huang's contributions to semiconductor technology through his patent and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor. His innovative methods continue to shape the future of semiconductor devices.