The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Sep. 10, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsungyu Hung, Hsinchu, TW;
Pang-Yen Tsai, Hsin-Chu Hsian, TW;
Ding-Kang Shih, New Taipei, TW;
Sung-Li Wang, Hsinchu, TW;
Chia-Hung Chu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Low-resistance contacts improve performance of integrated circuit devices that feature epitaxial source/drain regions. The low resistance contacts can be used with transistors of various types, including planar field effect transistors (FETs), FinFETs, and gate-all-around (GAA) FETs. Low-resistance junctions are formed by removing an upper portion of the source/drain region and replacing it with an epitaxially-grown boron-doped silicon germanium (SiGe) material. Material resistivity can be tuned by varying the temperature during the epitaxy process. Electrical contact is then made at the low-resistance junctions.