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For the Inventor, By the Inventor

Taipei, Taiwan

Ding-Kang Shih

USPTO Granted Patents = 34 

Average Co-Inventor Count = 4.3

ph-index = 5

Forward Citations = 3,298(Granted Patents)


Company Filing History:

goldMedal34 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

where 'Filed Patents' based on already Granted Patents

34 patents (USPTO):
1. 12477778 - Epitaxial structure for source/drain contact for semiconductor structure having fin structure (2025-11-18),
2. 12446269 - Strained nanosheets on silicon-on-insulator substrate (2025-10-14),
3. 12439623 - Field effect transistors with dual silicide contact structures (2025-10-07),
4. 12369386 - Epitaxial layers in source/drain contacts and methods of forming the same (2025-07-22),
5. 12369341 - Channel structures for semiconductor devices (2025-07-22),
6. 12363980 - Spacer structure for semiconductor device (2025-07-15),
7. 12148807 - Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors (2024-11-19),
8. 12080766 - Epitaxial backside contact (2024-09-03),
9. 12051730 - Source/drain feature to contact interfaces (2024-07-30),
10. 11942533 - Channel structures for semiconductor devices (2024-03-26),
11. 11855177 - Field effect transistors with dual silicide contact structures (2023-12-26),
12. 11854898 - Wrap-around contact on FinFET (2023-12-26),
13. 11626494 - Epitaxial backside contact (2023-04-11),
14. 11410890 - Epitaxial layers in source/drain contacts and methods of forming the same (2022-08-09),
15. 11362000 - Wrap-around contact on FinFET (2022-06-14),

Title: Innovations of Ding-Kang Shih: Pioneering Semiconductor Technologies

Introduction

Ding-Kang Shih is a prominent inventor based in New Taipei, Taiwan, known for his substantial contributions to the field of semiconductor technology. With a remarkable portfolio of 28 patents, Shih has significantly advanced the design and functionality of semiconductor devices.

Latest Patents

Among his latest innovations are two notable patents. The first patent describes "Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors." This invention outlines a method for forming a semiconductor device that includes a source/drain region. The method entails etching a portion of the source/drain region to create an opening and forming an epitaxial contact structure. This innovative structure enhances the performance and efficiency of semiconductor devices.

The second patent focuses on an "Epitaxial backside contact." This semiconductor device structure encompasses a source feature and a drain feature, channel structures, and a unique gate structure that wraps around each channel. The incorporation of various layers, including a semiconductor layer and a dielectric layer, underscores Shih's commitment to improving device architecture.

Career Highlights

Ding-Kang Shih currently works with Taiwan Semiconductor Manufacturing Company Ltd., where he applies his expertise to develop cutting-edge semiconductor technologies. His extensive experience in this dynamic industry has positioned him as a key figure in the advancement of modern semiconductor manufacturing processes.

Collaborations

Throughout his career, Shih has collaborated with distinguished colleagues such as Sung-Li Wang and Clement Hsingjen Wann. These collaborations have not only enhanced the quality of his inventions but also contributed to a culture of innovation within the company.

Conclusion

Ding-Kang Shih's innovative work in semiconductor technology continues to influence the industry significantly. With his extensive patent portfolio and collaborative spirit, he remains a driving force behind advancements in semiconductor design and manufacturing. As technology evolves, Shih's contributions will undoubtedly play a vital role in shaping the future of electronic devices.

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