The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Jan. 04, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Hung Chu, Hsinchu, TW;

Sung-Li Wang, Hsinchu County, TW;

Shuen-Shin Liang, Hsinchu, TW;

Hsu-Kai Chang, Hsinchu, TW;

Ding-Kang Shih, New Taipei, TW;

Tsungyu Hung, Hsinchu, TW;

Pang-Yen Tsai, Hsian, TW;

Keng-Chu Lin, Ping-Tung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/28518 (2013.01); H01L 23/5286 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device structure according to the present disclosure includes a source feature and a drain feature, at least one channel structure extending between the source feature and the drain feature, a gate structure wrapped around each of the at least one channel structure, a semiconductor layer over the gate structure, a dielectric layer over the semiconductor layer, a doped semiconductor feature extending through the semiconductor layer and the dielectric layer to be in contact with the source feature, a metal contact plug over the doped semiconductor feature, and a buried power rail disposed over the metal contact plug.


Find Patent Forward Citations

Loading…