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Hsinchu, Taiwan

Hsu-Kai Chang

This inventor holds 37 USPTO granted patents and 29 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Industrial Technology Research Institute, Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsu-Kai Chang. Retrieved from https://idiyas.com/inventor/hsu-kai-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 37 

% Patents Active = 83.8

Average Co-Inventor Count = 6.9

ph-index = 3

Forward Citations = 28(Granted Patents)


Location History:

  • Hsinchu County, TW (2016)
  • Hsinchu, TW (2014 - 2024)

Company Filing History:

goldMedal33 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 9,307 
 
Industrial Technology Research Institute
 patents
bronzeMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents
4. 2 out of 834,513 
Other
 patents

Years Active: 2014-2026

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Areas of Expertise:
Semiconductor Devices
Contact Structures
Conductive Liners
Dual Side Contacts
Epitaxial Contacts
Hybrid Conductive Structures
Metal Nanoparticles
Organometallic Cluster Photoresists
Light Generation Systems
Fin Field Transistors
Capping Layers
Conductive Structures
37 patents (USPTO):Explore Patents
1. 12757723 - Semiconductor structure and method of manufacturing the same (2026-10-06),
2. 12672335 - Backside contact structures for semiconductor devices (2026-06-30),
3. 12593469 - Dual side source/drain contact structures in semiconductor devices and method for forming the same (2026-03-31),
4. 12588268 - Liner-free conductive structures (2026-03-24),
5. 12489082 - Metal nanoparticles in an amorphous bonding layer between a device substrate and carrier substrate (2025-12-02),
6. 12457790 - Semiconductor device including conductive nitride feature and method of making the semiconductor device (2025-10-28),
7. 12451392 - Methods for seam repair and semiconductor structure manufactured thereof (2025-10-21),
8. 12433006 - Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device (2025-09-30),
9. 12400962 - Liner-free conductive structures with anchor points (2025-08-26),
10. 12362234 - Contact structure for semiconductor device (2025-07-15),
11. 12170331 - Conductive structures and methods of formation (2024-12-17),
12. 12148807 - Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors (2024-11-19),
13. 12080766 - Epitaxial backside contact (2024-09-03),
14. 12068252 - Hybrid conductive structures (2024-08-20),
15. 12057397 - Capping layer for liner-free conductive structures (2024-08-06),

Title: The Innovative Journey of Hsu-Kai Chang

Introduction: Hsu-Kai Chang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Hsu-Kai Chang's latest patents showcase his commitment to innovation, with a focus on cutting-edge technologies in the semiconductor industry and beyond. His recent inventions have revolutionized the way we approach challenges in the digital age.

Career Highlights: Throughout his illustrious career, Hsu-Kai Chang has been at the forefront of technological advancements, leading research and development teams to new heights of innovation. His work has not only earned him recognition within the industry but has also had a lasting impact on the global tech landscape.

Collaborations: Hsu-Kai Chang's collaborative spirit has been instrumental in his success, as he has worked closely with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to foster partnerships and drive innovation forward sets him apart as a visionary inventor.

Conclusion: In conclusion, Hsu-Kai Chang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a trailblazing inventor. His contributions to the field will continue to inspire future generations of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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