The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Mar. 15, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuan-Kan Hu, Hsinchu, TW;
Shuen-Shin Liang, Hsinchu, TW;
Chia-Hung Chu, Hsinchu, TW;
Po-Chin Chang, Hsinchu, TW;
Hsu-Kai Chang, Hsinchu, TW;
Ken-Yu Chang, Hsinchu, TW;
Wei-Yip Loh, Hsinchu, TW;
Hung-Yi Huang, Hsinchu, TW;
Harry Chien, Hsinchu, TW;
Sung-Li Wang, Hsinchu, TW;
Pinyen Lin, Hsinchu, TW;
Chuan-Hui Shen, Hsinchu, TW;
Tzu-Pei Chen, Hsinchu, TW;
Yuting Cheng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.