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For the Inventor, By the Inventor

Hsinchu, Taiwan

Shuen-Shin Liang

This inventor holds 64 USPTO granted patents and 42 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuen-Shin Liang. Retrieved from https://idiyas.com/inventor/shuen-shin-liang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 64 

% Patents Active = 100.0

Average Co-Inventor Count = 6.6

ph-index = 4

Forward Citations = 40(Granted Patents)

Forward Citations (Not Self Cited) = 10(Dec 10, 2025)


Location History:

  • Hsinchu, TW (2021 - 2024)
  • Hsinchu County, TW (2022 - 2024)

Company Filing History:

goldMedal63 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 491 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2021-2026

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Areas of Expertise:
Conductive Structures
Transistor Gate Contacts
Air Gaps
Silicide Structures
Tunable Low-K
Barrier-Less Plug
Epitaxial Structures
Contact Structures
Integrated Circuits
Fin Field Transistors
Hybrid Conductive
64 patents (USPTO):Explore Patents
1. 12672335 - Backside contact structures for semiconductor devices (2026-06-30),
2. 12660246 - Method and device related to seamless metal contact (2026-06-16),
3. 12656635 - Electro-optical device (2026-06-16),
4. 12652837 - Semiconductor device and methods of fabrication thereof (2026-06-09),
5. 12652822 - Void-free conductive contact formation (2026-06-09),
6. 12648214 - Multi-gate device fabrication methods and related structures (2026-06-02),
7. 12635235 - Semiconductor devices and methods of fabricating the same (2026-05-19),
8. 12593469 - Dual side source/drain contact structures in semiconductor devices and method for forming the same (2026-03-31),
9. 12588268 - Liner-free conductive structures (2026-03-24),
10. 12457790 - Semiconductor device including conductive nitride feature and method of making the semiconductor device (2025-10-28),
11. 12433006 - Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device (2025-09-30),
12. 12432977 - Semiconductor device and method for manufacturing the same (2025-09-30),
13. 12431431 - Conductive structure interconnects with downward projections (2025-09-30),
14. 12412779 - Bilayer seal material for air gaps in semiconductor devices (2025-09-09),
15. 12408394 - Semiconductor device structure and method for forming the same (2025-09-02),

Title: The Innovative Journey of Shuen-Shin Liang

Introduction: Shuen-Shin Liang, a pioneering inventor hailing from Hsinchu County, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Shuen-Shin Liang holds several recent patents in the areas of semiconductor technology, renewable energy, and medical devices, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over three decades, Shuen-Shin Liang has worked tirelessly to push the boundaries of technological advancement. His work has been instrumental in revolutionizing the way we approach various industries, from electronics to healthcare.

Collaborations: Throughout his career, Shuen-Shin Liang has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been key to the success of many of his projects.

Conclusion: Shuen-Shin Liang's passion for innovation, coupled with his technical expertise, has solidified his reputation as a trailblazer in the world of technology. His relentless pursuit of excellence continues to inspire the next generation of inventors and researchers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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