The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Mar. 13, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shuen-Shin Liang, Hsinchu County, TW;
Kan-Ju Lin, Kaohsiung City, TW;
Chia-Hung Chu, Taipei City, TW;
Chien Chang, Hsinchu, TW;
Harry Chien, Chandler, AZ (US);
Sung-Li Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method for semiconductor fabrication. The method includes depositing a first metal layer by a first deposition over a source/drain (S/D) feature and over side portions of a trench exposing the S/D feature. The first metal layer is thicker over the S/D feature than over side portions of the trench. The method includes growing a metal on the first metal layer by a second deposition to form a second metal layer filling up the trench. The second deposition is different from the first deposition and the growing of the metal in a vertical direction is grown at a faster rate than the growing of the metal in a horizontal direction. After growing the metal to form the second metal layer, the method includes planarizing the first and second metal layers to form an S/D contact. The method forms an S/D via on the second metal layer.