The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
May. 26, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shuen-Shin Liang, Hsinchu, TW;
Min-Chiang Chuang, Hsinchu, TW;
Chia-Cheng Chen, Hsinchu, TW;
Chun-Hung Wu, Hsinchu, TW;
Liang-Yin Chen, Hsinchu, TW;
Sung-Li Wang, Hsinchu, TW;
Pinyen Lin, Hsinchu, TW;
Kuan-Kan Hu, Hsinchu, TW;
Jhih-Rong Huang, Hsinchu, TW;
Szu-Hsian Lee, Hsinchu, TW;
Tsun-Jen Chan, Hsinchu, TW;
Cheng-Wei Lian, Hsinchu, TW;
Po-Chin Chang, Hsinchu, TW;
Chuan-Hui Shen, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Yuting Cheng, Hsinchu, TW;
Yan-Ming Tsai, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.