Hsinchu, Taiwan

Jhih-Rong Huang

USPTO Granted Patents = 9 

Average Co-Inventor Count = 7.9

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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9 patents (USPTO):

Title: Jhih-Rong Huang: Innovator in Semiconductor Technology

Introduction

Jhih-Rong Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on improving semiconductor devices and their manufacturing processes.

Latest Patents

One of his latest patents is titled "Semiconductor device and method for manufacturing the same." This invention includes a semiconductor device that features a source/drain portion, a metal silicide layer, and a transition layer. The transition layer contains implantation elements, which are present in higher concentrations than in the source/drain portion and the metal silicide layer. This design aims to reduce contact resistance between these components. Another notable patent is "Semiconductor device and manufacturing method thereof." This method outlines the process of forming a first transistor over a substrate, depositing an interlayer dielectric layer, and etching an opening to expose the first source/drain feature. It also involves conformably depositing a semimetal layer and forming a source/drain contact.

Career Highlights

Jhih-Rong Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technology.

Collaborations

He has collaborated with notable coworkers, including Yen-Tien Tung and Tzer-Min Shen, contributing to various projects and advancements in semiconductor research.

Conclusion

Jhih-Rong Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of advanced semiconductor devices.

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