The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Jan. 07, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsu-Kai Chang, Hsinchu, TW;
Jhih-Rong Huang, Hsinchu, TW;
Yen-Tien Tung, Hsinchu, TW;
Chia-Hung Chu, Taipei, TW;
Shuen-Shin Liang, Hsinchu, TW;
Tzer-Min Shen, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
Sung-Li Wang, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.