Pinyen Lin

This inventor holds 173 USPTO granted patents and 67 published patent applications, plus 3 CIPO patents and 4 EPO patents, primarily in Semiconductor Manufacturing (CPC class H01L29-66545). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Xerox Corporation, Palo Alto Research Center Inc.. Active years: 1997-2026.

USPTO Granted Patents = 173 (Patent Applications = 67)

% Patents Active = 71.1

CIPO Patents = 3 (Patent Applications = 1)

EPO Patents = 4 (Patent Applications = 1)

Average Co-Inventor Count = 3.7

ph-index = 14

Forward Citations = 724(Granted Patents)

Forward Citations (Not Self Cited) = 675(Dec 10, 2025)

Inventors with similar research interests:

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Company Filing History:

95 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

Palo Alto Research Center Inc.

patents

4. 2 out of 437

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

5. 1 out of 110

TSMC Nanjing Company, Limited

patents

where one patent can have more than one assignee

Years Active: 1997-2026

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Areas of Expertise:

Epitaxial Formation

Metal Gate Formation

High Selectivity Etching

Semiconductor Devices

Gate Structures

Dry Etching

Isolation Structures

Contact Structures

FinFet Fabrication

Inner Spacer Layers

Embedded Memory

Capping Structures

173 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12721134 - Conductive structures of integrated circuits (2026-08-25),

2. 12660289 - Semiconductor device structure and methods of forming the same (2026-06-16),

3. 12622043 - Gate etch back with reduced loading effect (2026-05-05),

4. 12622041 - Gate dielectric for gate leakage reduction (2026-05-05),

5. 12598937 - Epitaxial formation with treatment and semiconductor devices resulting therefrom (2026-04-07),

6. 12575156 - Reducing pattern loading in the etch-back of metal gate (2026-03-10),

7. 12527072 - Self-aligned patterning layer for metal gate formation (2026-01-13),

8. 12520558 - High selectivity etching with germanium-containing gases (2026-01-06),

9. 12513951 - Gate structures in semiconductor devices (2025-12-30),

10. 12471344 - Dry etching of semiconductor structures with fluorine-containing gases (2025-11-11),

11. 12451392 - Methods for seam repair and semiconductor structure manufactured thereof (2025-10-21),

12. 12431431 - Conductive structure interconnects with downward projections (2025-09-30),

13. 12396245 - Semiconductor arrangement and method for making (2025-08-19),

14. 12389619 - Semiconductor device structure with inner spacer layer (2025-08-12),

15. 12376337 - Air inner spacers (2025-07-29),

Title: The Innovative Journey of Inventor Pinyen Lin

Introduction: Pinyen Lin, a talented inventor based in Rochester, NY, has made significant contributions to the field of technology with his creative solutions and groundbreaking inventions.

Latest Patents: Pinyen Lin holds several patents in the areas of electronics and telecommunications, including a recent patent for a cutting-edge communication device that revolutionizes data transmission efficiency.

Career Highlights: With a background in engineering and a passion for innovation, Pinyen Lin has successfully developed and patented multiple inventions that have garnered attention in the industry for their ingenuity and practicality.

Collaborations: Throughout his career, Pinyen Lin has collaborated with leading tech companies and research institutions to further enhance his inventions and bring them to the market, showcasing his ability to work effectively in multidisciplinary teams.

Conclusion: Pinyen Lin's dedication to pushing the boundaries of technology through his inventive spirit and collaborative efforts solidifies his position as a respected inventor in Rochester, NY, and beyond.