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Rochester, NY, United States of America

Pinyen Lin

USPTO Granted Patents = 164 (Patent Applications = 57)

CIPO Patents = 3 (Patent Applications = 1)

EPO Patents = 4 (Patent Applications = 1)

Average Co-Inventor Count = 3.6

ph-index = 14

Forward Citations = 712(Granted Patents)

Forward Citations (Not Self Cited) = 675(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

89 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

75 out of 24,195

Xerox Corporation

Palo Alto Research Center Inc.

TSMC Nanjing Company, Limited

where one patent can have more than one assignee

Years Active: 1997-2025

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Areas of Expertise:

Semiconductor Manufacturing

Dry Etching

Finfet Fabrication

Gate All Around Transistors

Contact Structures

Isolation Structures

Spacer Structures

Embedded Backside Memory

Ion Beam Etching

High Selectivity Etching

Multi-Gate Transistors

Conductive Interconnects

164 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12471344 - Dry etching of semiconductor structures with fluorine-containing gases (2025-11-11),

2. 12451392 - Methods for seam repair and semiconductor structure manufactured thereof (2025-10-21),

3. 12431431 - Conductive structure interconnects with downward projections (2025-09-30),

4. 12396245 - Semiconductor arrangement and method for making (2025-08-19),

5. 12389619 - Semiconductor device structure with inner spacer layer (2025-08-12),

6. 12376337 - Air inner spacers (2025-07-29),

7. 12363962 - Isolation structures of semiconductor devices (2025-07-15),

8. 12362234 - Contact structure for semiconductor device (2025-07-15),

9. 12341056 - Method of fabricating a semiconductor structure and semiconductor structure obtained therefrom (2025-06-24),

10. 12336252 - Inner spacer formation in multi-gate transistors (2025-06-17),

11. 12300506 - Method of manufacturing semiconductor devices (2025-05-13),

12. 12288722 - Spacer structure for semiconductor device and method for forming the same (2025-04-29),

13. 12272752 - Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructures (2025-04-08),

14. 12230507 - Method of manufacturing semiconductor devices using directional process (2025-02-18),

15. 12224210 - Method for FinFet fabrication and structure thereof (2025-02-11),

Title: The Innovative Journey of Inventor Pinyen Lin

Introduction: Pinyen Lin, a talented inventor based in Rochester, NY, has made significant contributions to the field of technology with his creative solutions and groundbreaking inventions.

Latest Patents: Pinyen Lin holds several patents in the areas of electronics and telecommunications, including a recent patent for a cutting-edge communication device that revolutionizes data transmission efficiency.

Career Highlights: With a background in engineering and a passion for innovation, Pinyen Lin has successfully developed and patented multiple inventions that have garnered attention in the industry for their ingenuity and practicality.

Collaborations: Throughout his career, Pinyen Lin has collaborated with leading tech companies and research institutions to further enhance his inventions and bring them to the market, showcasing his ability to work effectively in multidisciplinary teams.

Conclusion: Pinyen Lin's dedication to pushing the boundaries of technology through his inventive spirit and collaborative efforts solidifies his position as a respected inventor in Rochester, NY, and beyond.

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