The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Aug. 30, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tze-Chung Lin, Hsinchu, TW;
Han-Yu Lin, Nantou County, TW;
Fang-Wei Lee, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 21/3065 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H01L 21/3065 (2013.01); H10D 30/031 (2025.01); H10D 30/6757 (2025.01); H10D 62/116 (2025.01); H10D 64/018 (2025.01); H10D 30/6735 (2025.01);
Abstract
The present disclosure describes a method that includes forming a fin structure with a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer and a second semiconductor layer, in which the second semiconductor layer includes germanium. The method further includes etching the fin structure to form an opening and etching a portion of the second semiconductor layer with a fluorine-containing gas through the opening.