The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 22, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiang-Pi Chang, New Taipei, TW;
Huang-Lin Chao, Hillsboro, OR (US);
Chung-Liang Cheng, Changhua County, TW;
Pinyen Lin, Rochester, NY (US);
Chun-Chun Lin, Hsinchu, TW;
Tzu-Li Lee, Huwei, TW;
Yu-Chia Liang, Hsinchu, TW;
Duen-Huei Hou, Hsinchu, TW;
Wen-Chung Liu, Hsinchu, TW;
Chun-I Wu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The semiconductor device includes a first gate structure and a second gate structure. The first gate structure includes a first interfacial oxide (IO) layer, a first high-K (HK) dielectric layer disposed on the first interfacial oxide layer, and a first dipole layer disposed at an interface between the first IL layer and the first HK dielectric layer. The HK dielectric layer includes a rare-earth metal dopant or an alkali metal dopant. The second gate structure includes a second IL layer, a second HK dielectric layer disposed on the second IL layer, and a second dipole layer disposed at an interface between the second IL layer and the second HK dielectric layer. The second HK dielectric layer includes a transition metal dopant and the rare-earth metal dopant or the alkali metal dopant.