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For the Inventor, By the Inventor

Taipei, Taiwan

Hsiang-Pi Chang

This inventor holds 40 USPTO granted patents and 25 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., University of California. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiang-Pi Chang. Retrieved from https://idiyas.com/inventor/hsiang-pi-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 97.5

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 45(Granted Patents)


Company Filing History:

goldMedal40 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 16,025 
 
University of California
 patents
where one patent can have more than one assignee

Years Active: 2014-2026

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Areas of Expertise:
Gate Dielectric
Self-Aligned Contact
Gate Spacers
Strained Channel
Threshold Voltage
Interfacial Layer
Nanolaminate Structure
Chemical Mechanical Polishing
Fin Structure
Multiple Patterning
Semiconductor Arrangement
Semiconductor Manufacturing
40 patents (USPTO):Explore Patents
1. 12751047 - Semiconductor device including interfacial layer with CET scaling and method for manufacturing the same (2026-09-29),
2. 12745440 - Gate structures in semiconductor devices (2026-09-22),
3. 12733421 - Gas phase treatment for manufacturing semiconductor structure (2026-09-08),
4. 12713687 - GATE STRUCTURES IN SEMICONDUCTOR DEVICES (2026-08-18),
5. 12622041 - Gate dielectric for gate leakage reduction (2026-05-05),
6. 12616011 - Semiconductor device including a self-aligned contact layer with enhanced etch resistance (2026-04-28),
7. 12598797 - Gate spacers in semiconductor devices (2026-04-07),
8. 12588234 - Semiconductor devices with implanted STI regions and methods of forming the same (2026-03-24),
9. 12520532 - Semiconductor devices and methods of manufacturing thereof (2026-01-06),
10. 12513951 - Gate structures in semiconductor devices (2025-12-30),
11. 12495566 - Semiconductor device having strained channel and method for manufacturing the same (2025-12-09),
12. 12490467 - Transistor and semiconductor device with multiple threshold voltages and fabrication method thereof (2025-12-02),
13. 12477784 - Dipoles in semiconductor devices (2025-11-18),
14. 12426292 - Semiconductor device with tunable threshold voltage and method for manufacturing the same (2025-09-23),
15. 12406859 - Gate structures in semiconductor devices (2025-09-02),

Title: Inventor Hsiang-Pi Chang: Revolutionizing Technology in New Taipei

Introduction: Hsiang-Pi Chang is a pioneering inventor based in New Taipei, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Chang holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing her diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, Chang has worked with leading research institutions and universities to develop cutting-edge solutions that have had a significant impact on various industries.

Collaborations: Throughout her career, Chang has collaborated with multinational companies, startups, and fellow inventors to bring her ideas to life and create tangible products that have improved the lives of many.

Conclusion: Hsiang-Pi Chang's relentless pursuit of innovation and her passion for pushing the boundaries of technology make her a true trailblazer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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