The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Apr. 10, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yao-Sheng Huang, Hsinchu, TW;

Hsiang-Pi Chang, Hsinchu, TW;

Shen-Yang Lee, Hsinchu, TW;

Huang-Lin Chao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H10D 64/01 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H10D 64/027 (2025.01); H10P 14/271 (2026.01); H10P 14/3411 (2026.01);
Abstract

A method for manufacturing a semiconductor structure includes trimming a semiconductor region using a gaseous halogen-based etchant such that the trimmed semiconductor region has a first part and a second part which is formed on the first part and which has a halogen-terminated trimmed surface, and treating the halogen-terminated trimmed surface of the second part using a gaseous oxidant including hydrogen and oxygen such that the second part is oxidized to form an oxidized part, and such that the halogen-terminated trimmed surface is converted into a hydroxyl group-terminated surface of the oxidized part.


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