Hsinchu, Taiwan

Huang-Lin Chao

This inventor holds 16 USPTO granted patents and 20 published patent applications, primarily in Semiconductor Manufacturing. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huang-Lin Chao. Retrieved from https://idiyas.com/inventor/huang-lin-chao-9dvv7b4v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 68.8

Average Co-Inventor Count = 5.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024-2026

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Areas of Expertise:
Gas Phase Treatment
Contact Plug
Gate Dielectric
Self-Aligned Contact
STI Regions
Memory Device
FinFET Structure
Strained Channel
Threshold Voltage
Chemical Mechanical Planarization
Work Function Layers
16 patents (USPTO):Explore Patents

Title: Innovations of Huang-Lin Chao

Introduction

Huang-Lin Chao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on enhancing the performance and manufacturing processes of semiconductor devices.

Latest Patents

One of his latest patents is titled "Semiconductor device with tunable threshold voltage and method for manufacturing the same." This invention includes a semiconductor device that features a channel layer, an interfacial layer, a gate dielectric layer, a gate electrode, dipole elements, and additional elements. The interfacial layer is positioned on the channel layer and consists of an insulating material. The gate dielectric layer is placed over the interfacial layer, ensuring that the channel layer is separated from it. The gate electrode is situated on the gate dielectric layer. The dipole elements are incorporated in at least one of the interfacial layer and the gate dielectric layer in a specific amount, allowing the semiconductor device to achieve a predetermined threshold voltage. Additional elements are strategically located in regions with dipole elements to minimize interfacial defects. Methods for manufacturing this semiconductor device are also disclosed.

Another notable patent is the "Method for forming a contact plug by bottom-up metal growth." This method outlines a process for creating a contact plug through bottom-up metal growth. The process begins with etching a substrate to create a contact hole that reveals a silicon-containing feature. A silicide layer is then formed on this feature, followed by the deposition of a metal seed layer over the silicide layer. Finally, a metal contact layer is added over the metal seed layer to complete the contact plug within the contact hole.

Career Highlights

Huang-Lin Chao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has contributed to advancements in semiconductor technology and manufacturing processes.

Collaborations

He has collaborated with notable coworkers, including Chung-Liang Cheng and Yao-Sheng Huang, further enhancing the impact of his inventions.

Conclusion

Huang-Lin Chao's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices and manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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