The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Apr. 23, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
I-Ming Chang, ShinChu, TW;
Jung-Hung Chang, Changhua, TW;
Yao-Sheng Huang, Kaohsiung, TW;
Huang-Lin Chao, Hsinchu, TW;
Chung-Liang Cheng, Changhua, TW;
Hsiang-Pi Chang, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a source/drain epitaxial feature disposed over a substrate, a plurality of semiconductor layers disposed parallelly to each other and in contact with the source/drain epitaxial feature, a gate electrode layer surrounding a portion of each of the plurality of semiconductor layers, and a dielectric region in the substrate below the source/drain epitaxial feature. The dielectric region includes a first oxidation region having a first dopant, and a second oxidation region having a second dopant different than the first dopant.