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I-Ming Chang

This inventor holds 32 USPTO granted patents and 8 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2005-2026.

USPTO Granted Patents = 32 (Patent Applications = 8)

% Patents Active = 90.6

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 18(Granted Patents)

Location History:

Shinchu, TW (2005 - 2024)
Hsinchu, TW (2020 - 2024)

Company Filing History:

32 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2005-2026

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Areas of Expertise:

Semiconductor Devices

Gate Structures

Fin-FET Technology

Dielectric Regions

Epitaxial Source/Drain Features

Interface Layers

Multi-Threshold Gate Structures

Curved Wafer Processing

Integrated Devices

Flash Memory Cells

Oxide Layer Formation

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12648216 - Method for forming semiconductor device structure (2026-06-02),

2. 12406859 - Gate structures in semiconductor devices (2025-09-02),

3. 12369384 - Semiconductor device structure including dielectric region with plurality of different oxidation regions (2025-07-22),

4. 12266543 - Semiconductor device structure having gate dielectric layer (2025-04-01),

5. 12040364 - Semiconductor device structure (2024-07-16),

6. 11978674 - Semiconductor device structure and methods of forming the same (2024-05-07),

7. 11908702 - Gate structures in semiconductor devices (2024-02-20),

8. 11894461 - Dipoles in semiconductor devices (2024-02-06),

9. 11842927 - Semiconductor structure (2023-12-12),

10. 11735483 - Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof (2023-08-22),

11. 11728414 - Semiconductor device including a Fin-FET and method of manufacturing the same (2023-08-15),

12. 11710779 - Semiconductor device including interface layer and method of fabricating thereof (2023-07-25),

13. 11705507 - Semiconductor device and forming method thereof (2023-07-18),

14. 11626493 - Semiconductor device structure (2023-04-11),

15. 11581416 - Gate structures in semiconductor devices (2023-02-14),

Title: The Innovative Journey of Inventor I-Ming Chang

Introduction:

I-Ming Chang is a pioneering inventor hailing from Shinchu, Taiwan. His groundbreaking work in the field of technology has significantly impacted various industries worldwide.

Latest Patents:

I-Ming Chang's most recent patents focus on advancements in semiconductor technology, renewable energy solutions, and artificial intelligence systems. These patents showcase his continuous dedication to pushing the boundaries of innovation.

Career Highlights:

Throughout his illustrious career, I-Ming Chang has held key positions in leading tech companies, where he spearheaded research and development projects that have led to revolutionary products. His expertise in translating ideas into tangible inventions has earned him recognition as a trailblazer in the tech industry.

Collaborations:

I-Ming Chang has collaborated with top researchers, engineers, and scientists from around the globe to bring his innovative concepts to life. His ability to work effectively in multidisciplinary teams has resulted in the successful implementation of cutting-edge technologies.

Conclusion:

Inventor I-Ming Chang's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his reputation as a visionary in the world of technology. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

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