The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
May. 24, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
I-Ming Chang, ShinChu, TW;
Chih-Cheng Lin, Taipei, TW;
Chi-Ying Wu, Hsinchu, TW;
Wei-Ming You, Taipei, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Oregon, OR (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an isolation layer over the base portion and surrounding the fin portion. The semiconductor device structure includes a metal gate stack over the isolation layer and wrapping around an upper part of the fin portion. The metal gate stack includes a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, and the gate dielectric layer includes fluorine. A first part of the isolation layer is not covered by the metal gate stack, the first part includes fluorine, and a first concentration of fluorine in the first part increases toward a first top surface of the first part.