The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
May. 28, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yao-Sheng Huang, Kaohsiung, TW;
Hung-Chang Sun, Kaohsiung, TW;
I-Ming Chang, Hsinchu, TW;
Zi-Wei Fang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a semiconductor fin extending from the semiconductor substrate, a gate structure extending across the semiconductor fin, and source/drain semiconductor layers on opposite sides of the gate structure. The source/drain semiconductor layers each have a first thickness over a top side of the semiconductor fin and a second thickness over a lateral side of the semiconductor fin. The first thickness and the second thickness have a difference smaller than about 20 percent of the first thickness.