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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Yao-Sheng Huang

This inventor holds 23 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Raydium Semiconductor Corporation. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yao-Sheng Huang. Retrieved from https://idiyas.com/inventor/yao-sheng-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal22 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 186 
 
Raydium Semiconductor Corporation
 patents

Years Active: 2005-2026

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Areas of Expertise:
Gas Phase Treatment
Self-Aligned Contact
Etch Resistance
STI Regions
Tunable Threshold Voltage
Gate Structures
Dielectric Region
Spacer Structure
Conformal Source/Drain Layer
Epitaxial Features
Integrated Circuit Wafer
Mixed-Mode Process
23 patents (USPTO):Explore Patents
1. 12733421 - Gas phase treatment for manufacturing semiconductor structure (2026-09-08),
2. 12616011 - Semiconductor device including a self-aligned contact layer with enhanced etch resistance (2026-04-28),
3. 12588234 - Semiconductor devices with implanted STI regions and methods of forming the same (2026-03-24),
4. 12477784 - Dipoles in semiconductor devices (2025-11-18),
5. 12426292 - Semiconductor device with tunable threshold voltage and method for manufacturing the same (2025-09-23),
6. 12406859 - Gate structures in semiconductor devices (2025-09-02),
7. 12402394 - Semiconductor structure (2025-08-26),
8. 12369384 - Semiconductor device structure including dielectric region with plurality of different oxidation regions (2025-07-22),
9. 12363980 - Spacer structure for semiconductor device (2025-07-15),
10. 12057495 - Semiconductor device with conformal source/drain layer (2024-08-06),
11. 11978674 - Semiconductor device structure and methods of forming the same (2024-05-07),
12. 11908702 - Gate structures in semiconductor devices (2024-02-20),
13. 11894461 - Dipoles in semiconductor devices (2024-02-06),
14. 11842927 - Semiconductor structure (2023-12-12),
15. 11735483 - Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof (2023-08-22),

Title: Trailblazing Inventor: Yao-Sheng Huang's Innovations in Semiconductor Technology

Introduction:

Yao-Sheng Huang, a distinguished inventor based in Kaohsiung, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of 12 patents to his name, Huang's expertise and passion for innovation have positioned him as a trailblazer in the world of technology.

Latest Patents:

One of Yao-Sheng Huang's latest patents includes the development of gate structures in semiconductor devices. This patent reveals configurations of gate structures and a method of fabricating them, highlighting his ingenuity in semiconductor design and fabrication. Additionally, his work on dipoles in semiconductor devices showcases his exploration of diverse materials and techniques in enhancing device performance.

Career Highlights:

Huang's career boasts engagements with prominent companies such as Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) and Raydium Semiconductor Corporation. His tenure at these companies has been marked by groundbreaking research and development in semiconductor technologies, shaping the landscape of the industry.

Collaborations:

Throughout his career, Yao-Sheng Huang has collaborated with esteemed professionals in the field, including I-Ming Chang and Huang-Lin Chao. These collaborations have not only led to innovative discoveries but have also fostered a culture of knowledge sharing and advancement within the semiconductor community.

Conclusion:

In conclusion, Yao-Sheng Huang's inventive spirit and technical prowess have propelled him to the forefront of semiconductor innovation. His groundbreaking patents, coupled with his collaborative efforts and industry experience, solidify his legacy as a visionary inventor inspiring future generations of innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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