The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Oct. 23, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
I-Ming Chang, Hsinchu, TW;
Chung-Liang Cheng, Changhua County, TW;
Hsiang-Pi Chang, New Taipei, TW;
Hung-Chang Sun, Kaohsiung, TW;
Yao-Sheng Huang, Kaohsiung, TW;
Yu-Wei Lu, Taipei, TW;
Fang-Wei Lee, Hsinchu, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first fin structure and a second fin structure, a first dielectric layer disposed over the first fin structure, a second dielectric layer disposed over the second fin structure, a first gate electrode disposed over the first dielectric layer, and a second gate electrode disposed over the second dielectric layer. A thickness of the first dielectric layer and a thickness of the second dielectric layer are equal. The second fin structure includes an outer region and an inner region, and a Ge concentration in the outer portion is less than Ge concentration in the inner portion.