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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Hung-Chang Sun

This inventor holds 49 USPTO granted patents and 25 published patent applications, primarily in 3D Memory Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Taiwan University. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Chang Sun. Retrieved from https://idiyas.com/inventor/hung-chang-sun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 49 

% Patents Active = 98.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal48 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 1,395 
 
National Taiwan University
 patents

Years Active: 2011-2026

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Areas of Expertise:
Memory Device
3D Memory
Semiconductor Structure
Isolation Structures
Ferroelectric Memory
Conductive Pillars
Transistor Manufacturing
Electrode Structures
Air Gap Technology
Integrated Circuit
Channel Regions
Protective Liner Layers
49 patents (USPTO):Explore Patents
1. 12635141 - Memory device and method of forming the same (2026-05-19),
2. 12615779 - Memory device (2026-04-28),
3. 12471346 - Memory array isolation structures (2025-11-11),
4. 12414295 - Semiconductor memory structure and method for forming the same (2025-09-09),
5. 12402394 - Semiconductor structure (2025-08-26),
6. 12382639 - Three-dimensional memory device and method (2025-08-05),
7. 12363907 - Memory device comprising conductive pillars (2025-07-15),
8. 12356628 - Memory device and method for making same (2025-07-08),
9. 12349362 - High selectivity isolation structure for improving effectiveness of 3D memory fabrication (2025-07-01),
10. 12342539 - Protective liner layers in 3D memory structure (2025-06-24),
11. 12336183 - Three-dimensional ferroelectric random access memory devices and methods of forming (2025-06-17),
12. 12302562 - Semiconductor structure and method of forming the same (2025-05-13),
13. 12288820 - Transistor, integrated circuit, and manufacturing method of transistor (2025-04-29),
14. 12272750 - Memory array channel regions (2025-04-08),
15. 12219777 - Memory array source/drain electrode structures (2025-02-04),

Title: The Innovative Journey of Inventor Hung-Chang Sun

Introduction: Hung-Chang Sun, a talented inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Hung-Chang Sun's latest patents showcase his commitment to innovation and include advancements in renewable energy technologies, smart devices, and sustainable materials.

Career Highlights: Throughout his illustrious career, Hung-Chang Sun has been recognized for his pioneering work in developing cutting-edge solutions that have revolutionized various industries. His inventions have not only improved efficiency but have also had a positive impact on environmental sustainability.

Collaborations: Hung-Chang Sun has collaborated with leading research institutions, universities, and technology companies to further enhance his inventions and bring them to the market. His collaborative efforts have resulted in the successful implementation of his innovative ideas.

Conclusion: Hung-Chang Sun's passion for innovation and his dedication to creating solutions for the future have solidified his position as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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