The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Aug. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Chang Sun, Kaohsiung, TW;
Sheng-Chih Lai, Hsinchu County, TW;
Tsuching Yang, Taipei, TW;
Yu-Wei Jiang, Hsinchu, TW;
Kuo-Chang Chiang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, JP;
Abstract
A device includes a dielectric layer, a conductive layer, electrode layers and an oxide semiconductor layer. The dielectric layer has a first surface and a second surface opposite to the first surface. The conductive layer is disposed on the first surface of the dielectric layer. The electrode layers are disposed on the second surface of the dielectric layer. The oxide semiconductor layer is disposed in between the second surface of the dielectric layer and the electrode layers, wherein the oxide semiconductor layer comprises a material represented by formula 1 (InSnTiMO). In formula 1, 0<x<1, 0≤y<1, 0<z<1, 0<m<1, 0<n<1, and M represents at least one metal.