Hsinchu, Taiwan

Kuo-Chang Chiang

This inventor holds 36 USPTO granted patents and 38 published patent applications, primarily in Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuo-Chang Chiang. Retrieved from https://idiyas.com/inventor/kuo-chang-chiang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 97.2

Average Co-Inventor Count = 5.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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Areas of Expertise:
Memory Device
Ferroelectric Memory
3D Memory Fabrication
Transistor Structure
Integrated Circuit
Conductive Pillars
Isolation Structures
Memory Array
Semiconductor Structure
Oxide Semiconductor
Channel Regions
Electrode Structures
36 patents (USPTO):Explore Patents

Title: Innovation Extraordinaire: The Phenomenal Inventor Kuo-Chang Chiang

Introduction:

In the realm of technological advancements, one name shines brightly - Kuo-Chang Chiang, a prolific inventor based in Hsinchu, Taiwan. With a staggering 13 patents to his name, Chiang's innovative spirit and cutting-edge creations have left an indelible mark on the field of memory devices.

Latest Patents:

Chiang's latest patents are revolutionizing the memory device landscape. One of his remarkable inventions includes a memory device comprising intricate layers and pillars, showcasing his mastery in optimizing performance and efficiency. Another groundbreaking patent introduces memory arc wall structures embedded within transistor structures, enhancing functionality and data storage capabilities.

Career Highlights:

Currently employed at Taiwan Semiconductor Manufacturing Company Ltd., Chiang's expertise and ingenuity have propelled him to the forefront of the industry. His relentless pursuit of innovation has led to the development of groundbreaking technologies that push the boundaries of what is possible in the world of memory devices.

Collaborations:

Collaboration lies at the heart of Chiang's success. His partnerships with talented individuals such as Yu-Wei Jiang and Hung-Chang Sun have resulted in the creation of unparalleled inventions that have garnered acclaim worldwide. Together, they form a formidable team driving forward progress and innovation in the field.

Conclusion:

In conclusion, Kuo-Chang Chiang stands as a visionary inventor whose contributions have transformed the landscape of memory devices. His unwavering dedication to pushing the boundaries of technology, coupled with his collaborative spirit, solidifies his position as a trailblazer in the industry. The impact of his work will undoubtedly continue to resonate for years to come, shaping the future of technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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