The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
May. 09, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Rainer Yen-Chieh Huang, Changhua County, TW;
Han-Ting Tsai, Kaoshiung, TW;
Tsann Lin, Taipei, TW;
Kuo-Chang Chiang, Hsinchu, TW;
Min-Kun Dai, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Provided is a method of forming a ferroelectric memory device including: forming a ferroelectric layer between a gate electrode and a channel layer by a first atomic layer deposition (ALD) process. The first ALD process includes: providing a first precursor during a first section; and providing a first mixed precursor during a second section, wherein the first mixed precursor includes a hafnium-containing precursor and a zirconium-containing precursor. In this case, the ferroelectric layer is directly formed as HfZrOwith an orthorhombic phase (O-phase) to enhance the ferroelectric polarization and property.