Hsinchu, Taiwan

Min-Kun Dai

USPTO Granted Patents = 9 

Average Co-Inventor Count = 5.9

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):

Title: Min-Kun Dai: A Pioneer in Ferroelectric Memory Technology

Introduction

Min-Kun Dai is a distinguished inventor based in Hsinchu, Taiwan. With a remarkable portfolio, he holds a total of 8 patents, contributing significantly to the field of semiconductor technology. His innovative approaches to ferroelectric memory devices are shaping the future of data storage.

Latest Patents

Among Dai's latest patents, one notable invention is the "Method of forming ferroelectric memory device." This method entails forming a ferroelectric layer between a gate electrode and a channel layer using a first atomic layer deposition (ALD) process. A key feature of this process involves the use of a first precursor and a mixed precursor containing hafnium and zirconium, which results in the formation of a ferroelectric layer as HfZrO with an orthorhombic phase. This advancement enhances the ferroelectric polarization and properties of the device.

Another significant patent is titled "Interconnection for a memory array and methods for forming the same." This patent encompasses a semiconductor structure and methods for its formation. The method consists of providing a substrate with distinct regions, creating an array of memory cells, and constructing a memory-level dielectric layer around these cells. Each memory cell consists of a bottom electrode, a memory material layer stack, and a top electrode, with a metal line strategically interfacing the top electrodes and memory-level dielectric layer.

Career Highlights

Min-Kun Dai's career is linked with Taiwan Semiconductor Manufacturing Company Ltd., where he engages in pioneering research and development. His efforts are instrumental in advancing semiconductor technologies, particularly in memory devices. His body of work showcases his commitment to innovation and excellence in this competitive field.

Collaborations

Throughout his career, Min-Kun Dai has collaborated with esteemed colleagues, including Chung-Te Lin and Han-Ting Tsai. These collaborations enhance the breadth of knowledge and expertise within their projects, leading to successful outcomes reflected in their collective patents.

Conclusion

Min-Kun Dai's contributions to the field of semiconductor technology through his innovative solutions in ferroelectric memory devices underscore his role as a leading inventor. With a strong foundation of patents and collaborations, his work continues to inspire advancements in data storage technologies, shaping the future of how data is processed and stored.

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