The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Jan. 06, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Chih-Yu Chang, New Taipei, TW;
Ken-Ichi Goto, Hsinchu, TW;
Yen-Chieh Huang, Changhua County, TW;
Min-Kun Dai, Hsinchu, TW;
Han-Ting Tsai, Kaoshiung, TW;
Sai-Hooi Yeong, Zhubei, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method of characterizing a wide-bandgap semiconductor material is provided. A substrate is provided, which includes a layer stack of a conductive material layer, a dielectric material layer, and a wide-bandgap semiconductor material layer. A mercury probe is disposed on a top surface of the wide-bandgap semiconductor material layer. Alternating-current (AC) capacitance of the layer stack is determined as a function of a variable direct-current (DC) bias voltage across the conductive material layer and the wide-bandgap semiconductor material layer. A material property of the wide-bandgap semiconductor material layer is extracted from a profile of the AC capacitance as a function of the DC bias voltage.