Yu-Ming Lin

Hsinchu, Taiwan

Yu-Ming Lin

This inventor holds 433 USPTO granted patents and 186 published patent applications and 2 EPO patents, primarily in Semiconductor Memory (CPC class H01L29-66795). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Industrial Technology Research Institute, United Microelectronics Corp.. Active years: 1990-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Ming Lin. Retrieved from https://idiyas.com/inventor/yu-ming-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 433 

% Patents Active = 98.6

 

Average Co-Inventor Count = 4.8

ph-index = 8

Forward Citations = 454(Granted Patents)

Forward Citations (Not Self Cited) = 286(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Hsinchu County, TW (2010)
  • Tainan County, TW (2010 - 2011)
  • Sanchong, TW (2012)
  • Taipei, TW (2017 - 2021)
  • Hsinchu, TW (1990 - 2024)
  • Tainan, TW (2014 - 2024)

Company Filing History:


Years Active: 1990-2026

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Areas of Expertise:
Ferroelectric Memory
3D Memory Devices
Transistor Structures
Embedded Ferroelectric FETs
Memory Cell
Thin Film Transistor
Stacked Conductive Structures
Non-Volatile Memory
Integrated Circuit Device
Source/Drain Contacts
Isolation Structure
Back-End-Of-Line
433 patents (USPTO):Explore Patents

Title: Yu-Ming Lin: Revolutionizing the Electronics Industry with Innovative Semiconductor Devices

Introduction:

Throughout his career, Yu-Ming Lin has continuously pushed boundaries and made significant advancements in the field of semiconductor devices. His work has garnered accolades and recognition, revolutionizing the electronics industry. As an integral part of Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), Lin's contributions have shaped the landscape of cutting-edge technologies and paved the way for further innovation.

Latest Patents:

Lin's latest patents demonstrate his expertise in developing semiconductor devices that incorporate novel features and technologies. Two standout patents are worth mentioning:

1. Semiconductor Device Having an Air Gap Along a Gate Spacer:

This patent presents a semiconductor device featuring an air gap between the gate structure and the source/drain contact. The device boasts a dielectric feature comprising upper and lower portions with varying widths, enabling enhanced performance. By incorporating an air gap, Lin's invention mitigates unwanted electrical interference and ensures optimal functionality.

2. Self-Aligned Active Regions and Passivation Layer:

Another notable patent by Lin introduces field-effect transistors with self-aligned active regions and a passivation layer. This innovation simplifies the manufacturing process while improving device performance. The self-aligned passivation layer enhances stability and reliability, ensuring efficient operation of the transistors.

Career Highlights:

Throughout his illustrious career, Lin's innovative work has earned him recognition and numerous accolades. From his early contributions to his most recent breakthroughs, Lin's achievements have left an indelible mark on the electronics industry. Notable career highlights include:

1. Development of Cutting-Edge Semiconductor Devices:

Lin's pioneering work in the development of semiconductor devices has pushed the boundaries of what was previously thought possible. His innovations have advanced the field, enabling faster, more efficient, and more powerful electronic devices.

2. Leadership in the Electronics Industry:

As a key figure at TSMC, Lin has consistently demonstrated exceptional leadership skills. His visionary approach has guided teams to overcome complex challenges and drive forward technological advancements.

Collaborations:

Lin's work is enriched by collaborations with talented individuals within the industry, including his coworkers Chih-Hao Wang and Chia-Hao Chang. Their combined expertise and shared vision have led to successful collaborations and groundbreaking innovations. These collaborative efforts have further solidified Lin's position as an accomplished innovator and prolific inventor.

Conclusion:

Yu-Ming Lin's impressive career in semiconductor device development has had a profound impact on the electronics industry. Through his relentless pursuit of innovation, Lin has transformed the way we think about and utilize electronic devices. With pioneering contributions to cutting-edge technologies, he continues to shape the future of semiconductor devices and inspire the next generation of inventors in this ever-evolving field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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