The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jun. 12, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
I-Che Lee, Hsinchu, TW;
Huai-Ying Huang, New Taipei City, TW;
Yen-Chieh Huang, Hsinchu, TW;
Kai-Wen Cheng, Taichung City, TW;
Yu-Ming Lin, Hsinchu City, TW;
Chung-Te Lin, Tainan City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 33/00 (2006.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
G01N 27/4141 (2013.01); G01N 27/4148 (2013.01); G01N 33/005 (2013.01); H10W 20/435 (2026.01);
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes a semiconductor substrate, a hydrogen sensing stacked layer disposed over the semiconductor substrate, and a protection layer disposed on the hydrogen sensing stacked layer. The hydrogen sensing stacked layer comprises a hydrogen-free oxide layer and a metal oxide layer disposed on the hydrogen-free oxide layer.