The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jun. 06, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
I-Che Lee, Taipei, TW;
Yen-Chieh Huang, Changhua, TW;
Huai-Ying Huang, Taipei, TW;
Kai-Wen Cheng, Taichung, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Embodiments of the present disclosure provide a method including forming a gate electrode over a substrate, forming a ferroelectric layer over the gate electrode, forming a channel layer over the ferroelectric layer, forming a capping layer over the channel layer, wherein the capping layer includes one or more of CeO, BeO, InO, GaO, AlO, SnO, VO, WO, TiO, ZrO, NbO, HfO, SiO, TaO, a binary metal oxide based on any combination of the preceding metal oxides, or a ternary metal oxide based on any combination of the preceding metal oxides, annealing, after forming the capping layer, at a temperature less than 350° C., forming a dielectric layer over the capping layer, and forming a source contact and a drain contact in the dielectric layer.