The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
May. 15, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
PO-Ting Lin, Taichung City, TW;
Wu-Wei Tsai, Taoyuan City, TW;
Hai-Ching Chen, Hsinchu City, TW;
Yu-Ming Lin, Hsinchu City, TW;
Chung-Te Lin, Tainan City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first transistor. The first transistor includes a source region, a drain region, a semiconductive material layer, a gate dielectric film stack and a gate electrode. The semiconductive material layer is disposed between the source region and the drain region. The gate dielectric film stack is disposed on the semiconductive material layer and includes a first film layer, a second film layer and an intermediate film layer. The first film layer and the second film layer include hafnium. The intermediate layer is sandwiched in between the first film layer and the second film layer and includes hafnium, wherein a hafnium content of the intermediate film layer is lower than a hafnium content of the first film layer and a hafnium content of the second film layer. The gate electrode is disposed on the gate dielectric film stack.