This inventor holds 5 USPTO granted patents and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: The Innovations of PO-Ting Lin
Introduction
PO-Ting Lin is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of electronic devices.
Latest Patents
One of his key patents is titled "Double gate ferroelectric field effect transistor devices and methods for forming the same." This invention involves a ferroelectric field effect transistor (FeFET) with a double-gate structure. The design includes a first gate electrode, a first ferroelectric material layer over the first gate electrode, a semiconductor channel layer, source and drain electrodes, a second ferroelectric material layer, and a second gate electrode. This innovative structure aims to improve the functionality of electronic components.
Career Highlights
PO-Ting Lin is currently associated with Taiwan Semiconductor Manufacturing Company Ltd. His role in this leading semiconductor firm allows him to contribute to cutting-edge technology and research. His expertise in ferroelectric materials and transistor design has positioned him as a valuable asset in the industry.
Collaborations
Due to space constraints, the collaborations section will be omitted.
Conclusion
PO-Ting Lin's work in the field of ferroelectric field effect transistors showcases his innovative spirit and dedication to advancing semiconductor technology. His contributions are paving the way for future developments in electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile