The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Feb. 16, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Chieh Huang, Changhua County, TW;
PO-Ting Lin, Taichung City, TW;
Song-Fu Liao, Taipei City, TW;
Hai-Ching Chen, Hsinchu City, TW;
Sai-Hooi Yeong, Zhubei City, TW;
Yu-Ming Lin, Hsinchu City, TW;
Chung-Te Lin, Tainan City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip (IC) comprising a first electrode structure disposed in a substrate. A first ferroelectric structure is disposed on a first side of the first electrode structure. A channel structure is disposed on a first side of the first ferroelectric structure. The channel structure includes a plurality of individual channel structures and a plurality of insulator structures. The plurality of individual channel structures and the plurality of insulator structures are alternately stacked. A pair of source/drain (S/D) structures are disposed on the first side of the first ferroelectric structure. The pair of S/D structures extend vertically through the channel structure, and the first electrode structure is disposed laterally between the S/D structures of the pair of S/D structures.