The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Aug. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chenchen Wang, Hsinchu, TW;
Chun-Chieh Lu, Taipei City, TW;
Chi On Chui, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Sai-Hooi Yeong, Zhubei City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 61/00 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10B 63/84 (2023.02); H10B 61/22 (2023.02); H10B 63/34 (2023.02); H10D 30/025 (2025.01); H10D 30/6728 (2025.01); H10D 30/6735 (2025.01);
Abstract
A device includes a first transistor over a substrate, a second transistor disposed over the first transistor, and a memory element disposed over the second transistor. The second transistor includes a channel layer, a gate dielectric layer surrounding a sidewall of the channel layer, and a gate electrode surrounding a sidewall of the gate dielectric layer.